Learn how to master Basic VLSI Design & sub-systems of Digital Circuits and the designing of different circuits like combinational and sequential etc. In this course, you will learn a very large-scale integration design course from scratch and also cover each and every detail with step-by-step procedures. Nowadays very large-scale integration technology emerging and growing day by day. You cannot imagine without the Basic VLSI Design & SubSystems of Digital Circuits or even electronics and integrated circuits because the usage of electronic gadgets now becoming a part of our daily routines. So we much depend on portable electronic gadgets for different purposes. The silicon-integrated circuitry makes it possible to design digital circuits which may be very complex and most economical in space, power requirements, and cost, and potentially very fast The area, power, and cost have made silicon the dominant fabrication technology for electronics in very wide-ranging areas of application. Like digital signal processing, analog, and digital communications as well as video processing, etc. Metal oxide semiconductor (MOS) related circuitry will meet requirements but still, it is being researched by ongoing improvements and the research in fabrication such that other techniques are being majorly adapted with gallium arsenide technology, including the use of materials other than silicon for the production of integrated circuits. . So it's needed to learn VLSI for better growth, particularly for electronics and computer related people. So for those who want to settle in the VLSI design field learning these concepts is essential .so start your journey with this course from now onwards.
In this course, you may learn the behavior of MOS circuits in a detailed manner as well as you could get a better understanding after completion of this course.
The course covers these topics
Basic Electrical Properties of a metal oxide semiconductor(MOS) and Bipolar and metal oxide semiconductor circuits
Current and voltage relationship and its characteristics
The Non-saturated region
Saturated region
Metal oxide semiconductor transistor transconductance and output conductance relationship.
The pass transistor
Inverter characteristics
Determination of pull-up to pull-down ratio for an NMOS driven by another NMOS inverter.
Pull up to pull down ratio for an NMOS Inverter driven by another NMOS inverter using the pass transistor.
Complementary metal oxide semiconductor as an inverter and its characteristics
Transconductance and output conductance
Alternative forms of pull-ups
Bipolar and complementary metal oxide semiconductor inverter circuits.
Feel free to ask any doubt while learning the course
Happy learning!
0 Comments